Observation of nonequilibrium carrier distribution in Ge, Si, and GaAs by terahertz pump-terahertz probe measurements
Name
Hebling-2010-Observation of nonequilibrium carrier distribution in Ge, Si, and GaAs by terahertz pump-terahertz probe measurements.pdf
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284.97 KB
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Checksum (MD5)
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Author(s)
Hebling, Janos
Hoffmann, Matthias C.
Hwang, Harold Young
Yeh, Ka-Lo
Nelson, Keith Adam
Date Issued
January 2010
Journal
Physical Review B
Publisher
American Physical Society
Citation
Hebling, Janos et al. “Observation of nonequilibrium carrier distribution in Ge, Si, and GaAs by terahertz pump terahertz probe measurements.” Physical Review B 81.3 (2010): 035201. © 2010 The American Physical Society
Version
Final published version
Abstract
We compare the observed strong saturation of the free-carrier absorption in n-type semiconductors at 300 K in the terahertz (THz) frequency range when single-cycle pulses with intensities up to 150 MW/cm[superscript 2] are used. In the case of germanium, a small increase in the absorption occurs at intermediate THz pulse energies. The recovery of the free-carrier absorption was monitored by time-resolved THz pump–THz probe measurements. At short probe delay times, the frequency response of germanium cannot be fitted by the Drude model. We attribute these unique phenomena of Ge to dynamical overpopulation of the high mobility Γ conduction-band valley.
MIT Department
Massachusetts Institute of Technology. Department of Chemistry
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.81.035201
