Real-time, in situ probing of gamma radiation damage with packaged integrated photonic chips
Name
Real-time in-situ probing of Gamma radiation damage with packaged integrated photonic chips.pdf
Description
Accepted version
Size
612.09 KB
Format
Adobe PDF
Checksum (MD5)
1093cee3b561cb913de0e392cac5096c
Author(s)
Du, Qingyang
Michon, Jerome
Li, Bingzhao
Kita, Derek M.
Ma, Danhao
Zuo, Haijie
Yu, Shaoliang
Gu, Tian
Agarwal, Anuradha
Li, Mo
Date Issued
January 2020
Journal
Photonics Research
Publisher
Optical Society of America (OSA)
Citation
Du, Qingyang et al. "Real-time, in situ probing of gamma radiation damage with packaged integrated photonic chips." Photonics Research 8, 2 (January 2020): 186-193 © 2020 Chinese Laser Press
Version
Author's final manuscript
Abstract
Integrated photonics is poised to become a mainstream solution for high-speed data communications and sensing in harsh radiation environments, such as outer space, high-energy physics facilities, nuclear power plants, and test fusion reactors. Understanding the impact of radiation damage in optical materials and devices is thus a prerequisite to building radiation-hard photonic systems for these applications. In this paper, we report real-time, in situ analysis of radiation damage in integrated photonic devices. The devices, integrated with an optical fiber array package and a baseline-correction temperature sensor, can be remotely interrogated while exposed to ionizing radiation over a long period without compromising their structural and optical integrity. We also introduce a method to deconvolve the radiation damage responses from different constituent materials in a device. The approach was implemented to quantify gamma radiation damage and post-radiation relaxation behavior of SiO2-cladded SiC photonic devices. Our findings suggest that densification induced by Compton scattering displacement defects is the primary mechanism for the observed index change in SiC. Additionally, post-radiation relaxation in amorphous SiC does not restore the original pre-irradiated structural state of the material. Our results further point to the potential of realizing radiation-hard photonic device designs taking advantage of the opposite signs of radiation-induced index changes in SiC and SiO2.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Materials Research Laboratory
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1364/prj.379019
