Sub-10-nm electron-beam lithography for templated placement of colloidal quantum dots
Name
770675473-MIT.pdf
Description
Full printable version
Size
6.34 MB
Format
Adobe PDF
Checksum (MD5)
0fed1be846649a112ea8da2c02da9085
Author(s)
Manfrinato, Vitor Riseti
Advisor(s)
Karl K. Berggren.
Date Issued
2011
Publisher
Massachusetts Institute of Technology
Abstract
This thesis presents the investigation of resolution limits of electron-beam lithography (EBL) at the sub-10-nm scale. EBL patterning was investigated at low electron energy (2 keV) in a converted scanning electron microscope and at high electron energy (200 keV) in an aberration-corrected scanning transmission electron microscope. Sub-10-nm structures were fabricated and proximity effects were evaluated in both conditions. As an application of sub-10-nm EBL, this thesis presents a templated-self-assembly technique to control the position of individual colloidal quantum dots smaller than 10 nm.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 53-55).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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