Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform
Name
IEDM_submission_paper-template_2022 (submitted).pdf
Size
1.14 MB
Format
Adobe PDF
Checksum (MD5)
0f3330b4b22aba8584a17bc8fc86764a
Author(s)
Xie, Qingyun
Yuan, Mengyang
Niroula, John
Greer, James A.
Rajput, Nitul S.
Chowdhury, Nadim
Palacios, Tomas
Date Issued
December 3, 2022
Journal
2022 International Electron Devices Meeting (IEDM)
Publisher
IEEE
Citation
Xie, Qingyun, Yuan, Mengyang, Niroula, John, Greer, James A., Rajput, Nitul S. et al. 2022. "Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform." 2022 International Electron Devices Meeting (IEDM).
Version
Author's final manuscript
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/iedm45625.2022.10019401
