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dc.contributor.advisorRuonan Han.en_US
dc.contributor.authorKaundinya, Pranav Ren_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2016-01-04T19:58:05Z
dc.date.available2016-01-04T19:58:05Z
dc.date.copyright2015en_US
dc.date.issued2015en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/100606
dc.descriptionThesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.en_US
dc.descriptionThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.en_US
dc.descriptionCataloged from student-submitted PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (pages 75-76).en_US
dc.description.abstractThis thesis explores the concept of synthesizing tunable impedances by establishing the appropriate phase relationship between the drain voltage and drain current of a MOS transistor. A high frequency, wide tuning range 105-121GHz oscillator and a small-footprint 20-40GHz oscillator using synthetic resonance are presented. The concept of impedance synthesis is also used to generate a novel frequency-adaptive loss compensation scheme for distributed amplifiers which is shown to improve the bandwidth by 30%. The performance of these circuits was analyzed and simulated on a TSMC 65nm bulk CMOS process.en_US
dc.description.statementofresponsibilityby Pranav R Kaundinya.en_US
dc.format.extent76 pagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleBroadband mm-wave signal generation and amplification in CMOS using synthetic impedanceen_US
dc.typeThesisen_US
dc.description.degreeM. Eng.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc932224082en_US


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