Show simple item record

dc.contributor.advisorKarl K. Berggren.en_US
dc.contributor.authorSurick, Jonathan Jacoben_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2016-01-04T19:59:36Z
dc.date.available2016-01-04T19:59:36Z
dc.date.copyright2015en_US
dc.date.issued2015en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/100622
dc.descriptionThesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.en_US
dc.descriptionThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.en_US
dc.descriptionCataloged from student-submitted PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (pages 105-107).en_US
dc.description.abstractIn this thesis we successfully fabricate Superconducting Nanowire Single Photon Detectors (SNSPDs) out of a hybrid film with layers of both niobium nitride (NbN) and amorphous tungsten silicide (WSi). These hybrid devices use the proximity effect to potentially be more efficient than either of the materials alone. In order to make these devices, we first grew high quality samples of tungsten silicide and characterized them before growing hybrid films useful for nanoscale devices. We tested a hybrid chip with a number of nanowire devices expecting more efficient and faster detectors than the material alone. Though the findings are promising with the devices having reset times of around 2 ns and jitter of around 50 ps the devices did not saturate indicating that further experiments are needed to characterize the hybrid devices.en_US
dc.description.statementofresponsibilityby Jonathan Jacob Surick.en_US
dc.format.extent106 pagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleGrowth of amorphous tungsten silicide and study of the proximity effect at low dimensions for superconducting applicationsen_US
dc.typeThesisen_US
dc.description.degreeM. Eng.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc932702667en_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record