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Artificial atoms and electron puddles : single and double barriers in a silicon MOS system

dc.contributor.advisorMarc A. Kastner.en_US
dc.contributor.authorAbusch-Magder, David, 1969-en_US
dc.date.accessioned2005-08-18T22:38:21Z
dc.date.available2005-08-18T22:38:21Z
dc.date.copyright1997en_US
dc.date.issued1997en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/10184
dc.descriptionThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1997.en_US
dc.descriptionIncludes bibliographical references (leaves 169-174).en_US
dc.description.statementofresponsibilityby David Abusch-Magder.en_US
dc.format.extent174 leavesen_US
dc.format.extent15829996 bytes
dc.format.extent15829749 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectPhysicsen_US
dc.titleArtificial atoms and electron puddles : single and double barriers in a silicon MOS systemen_US
dc.typeThesisen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physics
dc.identifier.oclc38250463en_US


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