| dc.contributor.advisor | Lionel C. Kimerling. | en_US |
| dc.contributor.author | Morse, Michael Ty | en_US |
| dc.date.accessioned | 2005-08-18T20:10:02Z | |
| dc.date.available | 2005-08-18T20:10:02Z | |
| dc.date.copyright | 1997 | en_US |
| dc.date.issued | 1997 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1721.1/10380 | |
| dc.description | Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1997. | en_US |
| dc.description | Includes bibliographical references (leaves 111-116). | en_US |
| dc.description.statementofresponsibility | by Michael Ty Morse. | en_US |
| dc.format.extent | 116 leaves | en_US |
| dc.format.extent | 8801789 bytes | |
| dc.format.extent | 8801549 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | eng | en_US |
| dc.publisher | Massachusetts Institute of Technology | en_US |
| dc.rights | M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. | en_US |
| dc.rights.uri | http://dspace.mit.edu/handle/1721.1/7582 | |
| dc.subject | Materials Science and Engineering | en_US |
| dc.title | Growth of erbium-doped Si/SiGe double heterostructures by ultra-high vacuum chemical vapor deposition | en_US |
| dc.type | Thesis | en_US |
| dc.description.degree | Ph.D. | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Materials Science and Engineering | |
| dc.identifier.oclc | 37525748 | en_US |
