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dc.contributor.advisorDimitri A. Antoniadis.en_US
dc.contributor.authorRana, Farhan, 1971-en_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2005-08-18T18:26:05Z
dc.date.available2005-08-18T18:26:05Z
dc.date.copyright1997en_US
dc.date.issued1997en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/10766
dc.descriptionThesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.en_US
dc.descriptionIncludes bibliographical references (leaves 129-132).en_US
dc.description.statementofresponsibilityby Farhan Rana.en_US
dc.format.extent132 leavesen_US
dc.format.extent8384110 bytes
dc.format.extent8383868 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleElectron tunneling processes in Si/SiO₂ systemsen_US
dc.typeThesisen_US
dc.description.degreeM.S.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc36962401en_US


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