The impact of sodium contamination in tin sulfide thin-film solar cells
Author(s)
Yang, Chuanxi; Polizzotti, Alex; Gordon, Roy G.; Steinmann, Vera; Brandt, Riley E; Chakraborty, Rupak; Jaramillo, Rafael; Young, Matthew C.; Ofori-Okai, Benjamin Kwasi; Nelson, Keith Adam; Buonassisi, Anthony; ... Show more Show less
DownloadThe impact of sodium contamination.pdf (1.727Mb)
PUBLISHER_POLICY
Publisher Policy
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Terms of use
Metadata
Show full item recordAbstract
Through empirical observations, sodium (Na) has been identified as a benign contaminant in some thin-film solar cells. Here, we intentionally contaminate thermally evaporated tin sulfide (SnS) thin-films with sodium and measure the SnS absorber properties and solar cell characteristics. The carrier concentration increases from 2 × 10[superscript 16] cm[superscript −3] to 4.3 × 10[superscript17] cm[superscript−3] in Na-doped SnS thin-films, when using a 13 nm NaCl seed layer, which is detrimental for SnS photovoltaic applications but could make Na-doped SnS an attractive candidate in thermoelectrics. The observed trend in carrier concentration is in good agreement with density functional theory calculations, which predict an acceptor-type Na[subscriptSn] defect with low formation energy.
Date issued
2016-02Department
Massachusetts Institute of Technology. Department of Chemistry; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Department of Mechanical EngineeringJournal
APL Materials
Publisher
American Institute of Physics (AIP)
Citation
Steinmann, Vera, Riley E. Brandt, Rupak Chakraborty, R. Jaramillo, Matthew Young, Benjamin K. Ofori-Okai, Chuanxi Yang, Alex Polizzotti, Keith A. Nelson, roy G. Gordon and Tonio Buonassisi, "The impact of sodium contamination in tin sulfide thin-film solar cells." APL Materials 4 (2016): 026103.
Version: Final published version
ISSN
2166-532X