Show simple item record

dc.contributor.advisorTomás Palacios.en_US
dc.contributor.authorYu, Lili, Ph. D. Massachusetts Institute of Technologyen_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2017-05-11T19:59:36Z
dc.date.available2017-05-11T19:59:36Z
dc.date.copyright2017en_US
dc.date.issued2017en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/108993
dc.descriptionThesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2017.en_US
dc.descriptionCataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (pages 177-186).en_US
dc.description.abstractIn the last few decades, the device community has explored a large number of technologies beyond silicon, that not only allow for further shrinkage in electronic systems size and power but can also provide new features, such as mechanical flexibility, large-area coverage at low cost thanks to inkjet printing, and simplified 3D integration. Two-dimensional electronics based on single-layer MoS₂ synthesized by chemical vapor deposition (CVD) offers significant advantages for realizing large-scale flexible systems owing to the ultrathin nature, excellent transport properties and stable crystalline structure of MoS₂. Despite all the progress, the MoS₂ electronics demonstrated so far is limited to single or few-device- scale circuits built on exfoliated flakes due to the many challenges associated with the uniformity and yield control in both material growth and device technologies. This thesis addresses issues which are crucial for realizing reliable, and high-yield complex circuits using emerging 2D materials, such as MoS₂: (1) Develop large-area material synthesis and transfer methods, as well as some of the first technologies for reliable enhancement mode MoS₂ transistors. (2) Design an automatic flow for fast implementation of complex circuits using MoS₂.Compact models and a process development kit (PDK) are developed for MoS₂ and are used to successfully implement both digital and analog circuits. (3) Study the sources of variability in MoS₂ devices and circuits and improve circuits yield by material, process, and device and circuit design co-optimization. (4) Demonstrate two system-level applications of CVD MoS₂: active matrix backplane circuits for transparent displays and radio frequency energy harvester. (5) Demonstrate the first air-stable CMOS technology monolithically integrated on WSe₂ to offer low power electronic solution. The future opportunities and potential challenges for all these technologies are also discussed. This thesis, in summary, provided important guidelines on how to take a new proof-of-concept material/device and make it into a useful technology to enable practical applications.en_US
dc.description.statementofresponsibilityby Lili Yu.en_US
dc.format.extent4, xii, 186 pagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsMIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleMoS₂ electronics : technology, high yield circuits and applicationsen_US
dc.title.alternativeTechnology, high yield circuits and applicationsen_US
dc.typeThesisen_US
dc.description.degreePh. D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc986522190en_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record