| dc.contributor.advisor | Clifton G. Fonstad. | en_US |
| dc.contributor.author | Elcess, Kimberley | en_US |
| dc.contributor.other | Massachusetts Institute of Technology. Department of Materials Science and Engineering. | en_US |
| dc.date.accessioned | 2017-06-06T19:22:11Z | |
| dc.date.available | 2017-06-06T19:22:11Z | |
| dc.date.copyright | 1988 | en_US |
| dc.date.issued | 1988 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1721.1/109624 | |
| dc.description | Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1988. | en_US |
| dc.description | On t.p. all "x̳" is subscript. | en_US |
| dc.description | Includes bibliographical references. | en_US |
| dc.description.statementofresponsibility | Kimberley Elcess. | en_US |
| dc.format.extent | 180 leaves | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | Massachusetts Institute of Technology | en_US |
| dc.rights | MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission. | en_US |
| dc.rights.uri | http://dspace.mit.edu/handle/1721.1/7582 | en_US |
| dc.subject | Materials Science and Engineering. | en_US |
| dc.title | The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy | en_US |
| dc.type | Thesis | en_US |
| dc.description.degree | Ph.D. | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Materials Science and Engineering | |
| dc.identifier.oclc | 19283326 | en_US |
