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dc.contributor.authorNogay, Gizem
dc.contributor.authorStuckelberger, Michael
dc.contributor.authorJohlin, Eric Carl
dc.contributor.authorAl-Obeidi, Ahmed F.
dc.contributor.authorBuonassisi, Anthony
dc.contributor.authorGrossman, Jeffrey C.
dc.date.accessioned2017-10-10T19:39:34Z
dc.date.available2017-10-10T19:39:34Z
dc.date.issued2016-05
dc.date.submitted2016-01
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.urihttp://hdl.handle.net/1721.1/111823
dc.description.abstractWhile low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improved hole collection in thick absorber layers. This is achieved by etching an array of 150 nm diameter holes into intrinsic a-Si:H and then coating the structured material with p-type a-Si:H and a conformal zinc oxide transparent conducting layer. The inclusion of these nanoholes yields relative power conversion efficiency (PCE) increases of ∼45%, from 7.2 to 10.4% PCE for small area devices. Comparisons of optical properties, time-of-flight mobility measurements, and internal quantum efficiency spectra indicate this efficiency is indeed likely occurring from an improved collection pathway provided by the nanostructuring of the devices. Finally, we estimate that through modest optimizations of the design and fabrication, PCEs of beyond 13% should be obtainable for similar devices.en_US
dc.publisherAmerican Chemical Society (ACS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1021/ACSAMI.6B00033en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT Web Domainen_US
dc.titleNanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaicsen_US
dc.typeArticleen_US
dc.identifier.citationJohlin, Eric et al. “Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics.” ACS Applied Materials & Interfaces 8, 24 (June 2016): 15169–15176 © 2016 American Chemical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.mitauthorJohlin, Eric Carl
dc.contributor.mitauthorAl-Obeidi, Ahmed F.
dc.contributor.mitauthorBuonassisi, Anthony
dc.contributor.mitauthorGrossman, Jeffrey C.
dc.relation.journalACS Applied Materials & Interfacesen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2017-10-10T17:31:20Z
dspace.orderedauthorsJohlin, Eric; Al-Obeidi, Ahmed; Nogay, Gizem; Stuckelberger, Michael; Buonassisi, Tonio; Grossman, Jeffrey C.en_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0001-9722-3697
dc.identifier.orcidhttps://orcid.org/0000-0001-8345-4937
dc.identifier.orcidhttps://orcid.org/0000-0003-1281-2359
mit.licensePUBLISHER_POLICYen_US


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