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Identifying and Eliminating Emissive Sub-bandgap States in Thin Films of PbS Nanocrystals

dc.contributor.authorHwang, Gyuweon
dc.contributor.authorKim, Donghun
dc.contributor.authorCordero Hernandez, Jose M.
dc.contributor.authorWilson, Mark William Brennan
dc.contributor.authorChuang, Chia-Hao Marcus
dc.contributor.authorGrossman, Jeffrey C.
dc.contributor.authorBawendi, Moungi G
dc.date.accessioned2017-10-10T20:01:18Z
dc.date.available2017-10-10T20:01:18Z
dc.date.issued2015-07
dc.date.submitted2015-05
dc.identifier.issn0935-9648
dc.identifier.issn1521-4095
dc.identifier.urihttp://hdl.handle.net/1721.1/111826
dc.description.abstractChemical oxidation of under-charged Pb atoms reduces the density of trap states by a factor of 40 in films of colloidal PbS quantum dots for devices. These emissive sub-bandgap states are a byproduct of several standard ligand-exchange procedures. X-ray photoelectron spectroscopy measurements and density function theory simulations demonstrate that they are associated with under-charged Pb.en_US
dc.description.sponsorshipUnited States. Department of Energy. Office of Basic Energy Sciences (Award DE-SC0001088)en_US
dc.publisherWiley-Blackwellen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/ADMA.201501156en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourcePMCen_US
dc.titleIdentifying and Eliminating Emissive Sub-bandgap States in Thin Films of PbS Nanocrystalsen_US
dc.typeArticleen_US
dc.identifier.citationHwang, Gyu Weon et al. "Identifying and Eliminating Emissive Sub-bandgap States in Thin Films of PbS Nanocrystals." Advanced Materials 27, 30 (July 2015): 4481–4486 © 2015 WILEY-VCH Verlag GmbH & Co.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemistryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.mitauthorHwang, Gyuweon
dc.contributor.mitauthorKim, Donghun
dc.contributor.mitauthorCordero Hernandez, Jose M.
dc.contributor.mitauthorWilson, Mark William Brennan
dc.contributor.mitauthorChuang, Chia-Hao Marcus
dc.contributor.mitauthorGrossman, Jeffrey C.
dc.contributor.mitauthorBawendi, Moungi G
dc.relation.journalAdvanced Materialsen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2017-10-10T18:00:00Z
dspace.orderedauthorsHwang, Gyu Weon; Kim, Donghun; Cordero, Jose M.; Wilson, Mark W. B.; Chuang, Chia-Hao M.; Grossman, Jeffrey C.; Bawendi, Moungi G.en_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-2288-3735
dc.identifier.orcidhttps://orcid.org/0000-0002-6419-4129
dc.identifier.orcidhttps://orcid.org/0000-0002-1694-4722
dc.identifier.orcidhttps://orcid.org/0000-0002-1957-2979
dc.identifier.orcidhttps://orcid.org/0000-0003-0808-6518
dc.identifier.orcidhttps://orcid.org/0000-0003-1281-2359
dc.identifier.orcidhttps://orcid.org/0000-0003-2220-4365
mit.licenseOPEN_ACCESS_POLICYen_US
mit.metadata.statusComplete


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