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dc.contributor.advisorMichael R. Watts.en_US
dc.contributor.authorByrd, Matthew (Matthew James)en_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2017-10-18T15:09:38Z
dc.date.available2017-10-18T15:09:38Z
dc.date.copyright2017en_US
dc.date.issued2017en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/111910
dc.descriptionThesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2017.en_US
dc.descriptionCataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (pages 121-128).en_US
dc.description.abstractMicrowave photonics is broadly defined as the study of optical devices operating in the microwave to millimeter wave spectrum, and interest in this field is continually driven by the need for higher electrical frequencies and larger signal bandwidths. However, electronic systems designed to meet these specifications are becoming increasingly challenging to create, while their microwave photonic counterparts offer a larger bandwidth, lower power consumption, higher linearity, and smaller footprint. Thus, microwave photonic systems are an attractive solution for challenging problems in the domain of high-speed electronics. This thesis will examine a specific component of a microwave photonic system, a frequency down-converter. This device takes two electronic input signals and outputs the difference between the two input frequencies. To date, all demonstrations of a photonic microwave frequency down-converter have been based on bulk optical devices that limit its deployability to a real-world application due to a large footprint. However, recent advances to silicon photonic fabrication processes stand to improve the performance and enable the mass-production of many different microwave photonic systems including a frequency down-converter. In this thesis, a library of passive CMOS-compatible silicon photonic components for microwave photonic systems was developed. Additionally, a high-saturation power germanium-on-silicon photodetector showing a 70% improvement in photocurrent generation under high incident powers, and a depletion mode optical phase shifter with a V[subscript [pi]]L of 0.9 V xcm and an electro-optical bandwidth of several gigahertz were designed and tested. Finally, all of these components were assembled in a novel architecture to create an integrated silicon photonic microwave frequency down-converter. Initial measurements of this structure showed an electrical-to-electrical conversion efficiency of -42 dB and a suppression of spurious frequencies of approximately 15 dB.en_US
dc.description.statementofresponsibilityby Matthew Byrd.en_US
dc.format.extent128 pagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsMIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleAdvanced silicon photonics for microwave frequency down-conversionen_US
dc.typeThesisen_US
dc.description.degreeS.M.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc1005231360en_US


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