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dc.contributor.authorAli, Sajid
dc.contributor.authorFord, Michael J.
dc.contributor.authorAharonovich, Igor
dc.contributor.authorGrosso, Gabriele
dc.contributor.authorMoon, Hyowon
dc.contributor.authorLienhard, Benjamin
dc.contributor.authorEfetov, Dmitri
dc.contributor.authorFurchi, Marco
dc.contributor.authorJarillo-Herrero, Pablo
dc.contributor.authorEnglund, Dirk R.
dc.date.accessioned2017-12-12T16:14:11Z
dc.date.available2017-12-12T16:14:11Z
dc.date.issued2017-09
dc.date.submitted2017-03
dc.identifier.issn2041-1723
dc.identifier.urihttp://hdl.handle.net/1721.1/112712
dc.description.abstractTwo-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission presented open challenges. Here, we demonstrate that strain control allows spectral tunability of hBN single photon emitters over 6 meV, and material processing sharply improves the single photon purity. We observe high single photon count rates exceeding 7 × 10 6 counts per second at saturation, after correcting for uncorrelated photon background. Furthermore, these emitters are stable to material transfer to other substrates. High-purity and photostable single photon emission at room temperature, together with spectral tunability and transferability, opens the door to scalable integration of high-quality quantum emitters in photonic quantum technologies.en_US
dc.description.sponsorshipUnited States. Department of Energy. Office of Basic Energy Sciences (Award DE-SC0001088)en_US
dc.publisherNature Publishing Groupen_US
dc.relation.isversionofhttp://dx.doi.org/10.1038/s41467-017-00810-2en_US
dc.rightsCreative Commons Attribution 4.0 Internationalen_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.sourceNatureen_US
dc.titleTunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitrideen_US
dc.typeArticleen_US
dc.identifier.citationGrosso, Gabriele, et al. “Tunable and High-Purity Room Temperature Single-Photon Emission from Atomic Defects in Hexagonal Boron Nitride.” Nature Communications 8, 1 (September 2017): 705 © 2017 The Author(s)en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.mitauthorGrosso, Gabriele
dc.contributor.mitauthorMoon, Hyowon
dc.contributor.mitauthorLienhard, Benjamin
dc.contributor.mitauthorEfetov, Dmitri
dc.contributor.mitauthorFurchi, Marco
dc.contributor.mitauthorJarillo-Herrero, Pablo
dc.contributor.mitauthorEnglund, Dirk R.
dc.relation.journalNature Communicationsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2017-12-11T18:12:01Z
dspace.orderedauthorsGrosso, Gabriele; Moon, Hyowon; Lienhard, Benjamin; Ali, Sajid; Efetov, Dmitri K.; Furchi, Marco M.; Jarillo-Herrero, Pablo; Ford, Michael J.; Aharonovich, Igor; Englund, Dirken_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-2577-1755
dc.identifier.orcidhttps://orcid.org/0000-0002-5906-0206
dc.identifier.orcidhttps://orcid.org/0000-0001-5241-4131
dc.identifier.orcidhttps://orcid.org/0000-0001-5862-0462
dc.identifier.orcidhttps://orcid.org/0000-0001-8217-8213
mit.licensePUBLISHER_CCen_US


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