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T-junction resonant modulators and detectors in CMOS

Author(s)
Cheian, Dinis
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Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Advisor
Rajeev Ram.
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MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission. http://dspace.mit.edu/handle/1721.1/7582
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Abstract
Design of optical modulators and detectors is investigated. A new design idea is proposed for optical modulators - T-junction. The T-junction allows to decouple the Extinction Ratio from the Bandwidth and to optimize each separately. Initial T-junction modulator provides an increase in bandwidth - 13 GHz versus 3 GHz, for the previous designs. An analytical model is created and is verified against the experimental data of the T-junctions. The model is then used to optimize the modulators and to achieve a design operating at above 35 GHz. The bandwidth increase with optical intensity is investigated in detectors. The unusual behavior is reproduced in Sentaurus. The severe depletion of the N and P regions is found to be responsible for the bandwidth variations. Increasing the doping of the P and N regions proves to successfully tackle the problem.
Description
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016.
 
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
 
Cataloged from student-submitted PDF version of thesis.
 
Includes bibliographical references (pages 128-131).
 
Date issued
2016
URI
http://hdl.handle.net/1721.1/112823
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Publisher
Massachusetts Institute of Technology
Keywords
Electrical Engineering and Computer Science.

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  • Electrical Engineering and Computer Sciences - Master's degree

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