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dc.contributor.advisorAugust F. Witt.en_US
dc.contributor.authorLee, Grace W. (Grace Wang)en_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Materials Science and Engineering.en_US
dc.date.accessioned2018-03-12T19:29:25Z
dc.date.available2018-03-12T19:29:25Z
dc.date.copyright2001en_US
dc.date.issued2001en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/114089
dc.descriptionThesis: S.B., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2001.en_US
dc.descriptionCataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (page 23).en_US
dc.description.abstractThe purpose of this work is to characterize the optical absorption in bismuth silicon oxide (Bi₁₂SiO₂₀) crystals grown using the Bridgman technique and to identify electronic transitions responsible for absorption. Optical measurements were taken in the range of 0.4 - 11 pm at 300 K and 77 K using a spectrometer. The results show that near the band edge, there is evidence of indirect transitions at 2.3 eV and excition transitions at 1.8 eV. Low temperature measurements revealed peaks of free carrier absorption in the visible light range at 1.7 eV and 2.1 eV. Illuminated samples at low temperature revealed empty donor levels in the visible range at 1.6-1.9 eV and 2.1 eV, indicating the presence of the photochromic effect and photorefractivity.en_US
dc.description.statementofresponsibilityby Grace W. Lee.en_US
dc.format.extent23 pagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsMIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectMaterials Science and Engineering.en_US
dc.titleOptical absorption of bismuth silicon oxide (Bi₁₂SiO₂₀) crystalsen_US
dc.typeThesisen_US
dc.description.degreeS.B.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.identifier.oclc1027217097en_US


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