Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size
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Author(s)
Kamboj, Varun S.
Braeuninger-Weimer, Philipp
Jessop, David S.
Singh, Angadjit
Sibik, Juraj
Ren, Yuan
Hofmann, Stephan
Zeitler, J. Axel
Beere, Harvey E.
Ritchie, David A.
Date Issued
February 2016
Journal
Proceedings Volume 9747, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX;
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Kamboj, Varun S., et al. "Low-Bias Gate Tunable Terahertz Plasmonic Signatures in Chemical Vapour Deposited Graphene of Varying Grain Size." Proceedings Volume 9747, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX, 13-18 February, 2016, San Francisco, California, edited by Laurence P. Sadwick and Tianxin Yang, 2016, p. 974707. © 2016 SPIE
Version
Final published version
Abstract
We report the characterization of centimeter sized graphene field-effect transistors with ionic gating which enables active frequency and amplitude modulation of terahertz (THz) radiation. Chemical vapour deposited graphene with different grain sizes were studied using THz time-domain spectroscopy. We demonstrate that the plasmonic resonances intrinsic to graphene can be tuned over a wide range of THz frequencies by engineering the grain size of the graphene. Further frequency tuning of the resonance, up to ∼65 GHz, is achieved by electrostatic doping via ionic gating. These results present the first demonstration of tuning the intrinsic plasmonic resonances in graphene.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1117/12.2209724
