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Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

Author(s)
Hennig, Jonas; Dadgar, Armin; Zhang, Yuhao; Sun, Min; Piedra, Daniel; Palacios, Tomas; ... Show more Show less
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Abstract
This paper studies the key parameters affecting on-resistance and current crowding in quasi-vertical GaN power devices by experiment and simulation. The current distribution in the drift region, n⁻-GaN, was found to be mainly determined by the sheet resistance of the current spreading layer, n⁺-GaN. The actual on-resistance of the drift region significantly depends on this current distribution rather than the intrinsic resistivity of the drift layer. As a result, the total specific on-resistance of quasi-vertical diodes shows a strong correlation with the device area and sheet resistance of the current spreading layer. By reducing the sheet resistance of the current spreading layer, the specific on-resistance of quasi-vertical GaN-on-Si power diodes has been reduced from ~10 mΩ x cm² to below 1 mΩ x cm². Design space of the specific on-resistance at different breakdown voltage levels has also been revealed in optimized quasi-vertical GaN power diodes.
Date issued
2017-10
URI
http://hdl.handle.net/1721.1/119022
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Zhang, Yuhao et al. “Reduction of on-Resistance and Current Crowding in Quasi-Vertical GaN Power Diodes.” Applied Physics Letters 111, 16 (October 16, 2017): 163506
Version: Final published version
ISSN
0003-6951
1077-3118

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