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dc.contributor.authorBolla, Geetha
dc.contributor.authorMyerson, Allan S.
dc.date.accessioned2018-12-18T17:44:39Z
dc.date.available2018-12-18T17:44:39Z
dc.date.issued2018-03
dc.date.submitted2018-02
dc.identifier.issn1466-8033
dc.identifier.urihttp://hdl.handle.net/1721.1/119683
dc.description.abstract© 2018 The Royal Society of Chemistry. Self-assembled monolayers are extended to SURMOFs as template hetero surfaces using a basic HKUST-1 MOF. The concept of MOF induced polymorphism with morphological engineering adapted to crystal engineering has shown to have the advantage of heterogeneous nucleation. The substrates are used to study the nucleation and growth of acetaminophen, and have resulted in metastable polymorphs which are of a desirable form with block morphology.en_US
dc.publisherRoyal Society of Chemistry (Great Britain)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1039/c8ce00272jen_US
dc.rightsCreative Commons Attribution 3.0 Unported licenseen_US
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en_US
dc.sourceRoyal Society of Chemistryen_US
dc.titleSURMOF induced polymorphism and crystal morphological engineering of acetaminophen polymorphs: advantage of heterogeneous nucleationen_US
dc.typeArticleen_US
dc.identifier.citationBolla, Geetha, and Allan S. Myerson. “SURMOF Induced Polymorphism and Crystal Morphological Engineering of Acetaminophen Polymorphs: Advantage of Heterogeneous Nucleation.” CrystEngComm 20, no. 15 (2018): 2084–2088.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemical Engineeringen_US
dc.contributor.mitauthorBolla, Geetha
dc.contributor.mitauthorMyerson, Allan S.
dc.relation.journalCrystEngCommen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2018-12-06T14:01:38Z
dspace.orderedauthorsBolla, Geetha; Myerson, Allan S.en_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-7468-8093
mit.licensePUBLISHER_CCen_US


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