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dc.contributor.advisorNicholas Fang.en_US
dc.contributor.authorTan, Zheng Jie.en_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Materials Science and Engineering.en_US
dc.date.accessioned2019-09-16T16:47:10Z
dc.date.available2019-09-16T16:47:10Z
dc.date.copyright2019en_US
dc.date.issued2019en_US
dc.identifier.urihttps://hdl.handle.net/1721.1/122078
dc.descriptionThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.en_US
dc.descriptionThesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2019en_US
dc.descriptionCataloged from student-submitted PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (pages 103-109).en_US
dc.description.abstractResistive switching devices are hotly being pursued for use as the fundamental units in next-generation hardware deep-learning or neuromorphic systems. However, these devices are still tricky both to fabricate and to operate with consistency. We present strategies which guarantees that switching devices are functional post-fabrication, and with switching cycles that are consistent both from cycle-to-cycle and device-to-device. The resistance of all observed high and low resistance states (HRS/LRS) spanned just 0.23 and 0.19 decades on the logarithm scale across all devices, with both states spanning 0.05 within single devices and all SET transitions falling within a 0.3V span in our multilayer FIB-processed device. DFT simulations suggest that Au atoms from the top metal electrode implanted deeper in the device by FIB would serve as bridging atoms for oxygen vacancies filament by promoting the formation of these vacancies.en_US
dc.description.abstractIn addition, multilayer thin oxide films reduce the stochasticity of filament formation and further improves the switching consistency. This strategy for high consistency resistive switching devices was subsequently exploited for a few purposes. Firstly, multi-bit switching was demonstrated to yield approximately 7 distinguishable states with a single blind set, i.e, without having to program current compliances or use iterative schemes. Secondly, further insights into the SET and RESET mechanisms using pulsed measurements could be obtained since switching stochasticity no longer obscures subtle trends in experimental data. The implications of this study goes beyond the demonstration of a single high consistency device. Future understandings in resistive switching devices shall be achieved more easily since causality between processing parameters and device behaviors can now be quickly established under the significant reduction in switching stochasticity.en_US
dc.description.abstractThe new degrees of freedom introduced here in designing resistive switching devices will also hasten the search for an optimal device, bringing forward the realization of large scale resistive RAM arrays for machine learning or hardware neuromorphic computing applications towards a nearer future.en_US
dc.description.statementofresponsibilityby Zheng Jie Tan.en_US
dc.format.extent109 pagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsMIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectMaterials Science and Engineering.en_US
dc.titleMultilayer thin film oxides for resistive switchingen_US
dc.typeThesisen_US
dc.description.degreePh. D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.identifier.oclc1117775072en_US
dc.description.collectionPh.D. Massachusetts Institute of Technology, Department of Materials Science and Engineeringen_US
dspace.imported2019-09-16T16:47:05Zen_US
mit.thesis.degreeDoctoralen_US
mit.thesis.departmentMatScien_US


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