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dc.contributor.advisorAkintunde I. Akinwande.en_US
dc.contributor.authorKaraulac, Nedeljko.en_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2019-10-11T22:11:27Z
dc.date.available2019-10-11T22:11:27Z
dc.date.copyright2019en_US
dc.date.issued2019en_US
dc.identifier.urihttps://hdl.handle.net/1721.1/122550
dc.descriptionThesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2019en_US
dc.descriptionCataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (pages 99-104).en_US
dc.description.abstractSilicon field emitter arrays (FEAs) are a potential candidate for electron sources in a variety of applications. However, one of the major problems that has prevented their widespread use is emitter tip burnout due to Joule heating. The current solution to this problem is to limit the current by using resistors, transistors, or nanowires in series with the field emitter tips. However, this method limits the maximum current performance of FEAs. In this thesis, we explored the idea of increasing the uniformity of emitter tip radii in order to mitigate tip burnout and improve FEA performance and reliability. To test our hypothesis, we established an analytical framework based on current sensitivity for obtaining uniform emission current and reducing tip burnout. Simulations showed that reducing the tip radius distribution is a more effective method for reducing the current sensitivity than increasing the resistance of a current limiter. Next, we developed a trilevel resist photolithography process that eliminates the light reflected at the resist/silicon interface. Using this process, we were able to obtain more uniform dot diameters, and hence etching mask, for fabricating field emitter tips. The transfer characteristics of the fabricated FEAs were measured, and we extracted a narrow range of bFN values from several different array sizes, which implies that the emitter tip radii are uniform. Further, we simulated and measured the output characteristics at low anode voltages and demonstrated the limits of empirical models. Lastly, we experimentally measured the energy distribution of electrons arriving at the anode and demonstrated that the distribution is wider than the calculated intrinsic energy distribution at the emitter; we suggested a mechanism that accounts for this discrepancy, and it should be explored in future works.en_US
dc.description.statementofresponsibilityby Nedeljko Karaulac.en_US
dc.format.extent104 pagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsMIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleHighly uniform silicon field emitter arrays fabricated using a trilevel resist processen_US
dc.typeThesisen_US
dc.description.degreeS.M.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.identifier.oclc1122565397en_US
dc.description.collectionS.M. Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Scienceen_US
dspace.imported2019-10-11T22:11:27Zen_US
mit.thesis.degreeMasteren_US
mit.thesis.departmentEECSen_US


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