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dc.contributor.advisorMartin A. Schmidt.en_US
dc.contributor.authorGould, Parker Andrew.en_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2019-10-11T22:12:09Z
dc.date.available2019-10-11T22:12:09Z
dc.date.copyright2019en_US
dc.date.issued2019en_US
dc.identifier.urihttps://hdl.handle.net/1721.1/122561
dc.descriptionThesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2019en_US
dc.descriptionCataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (pages 223-232).en_US
dc.description.abstractThe high cost of semiconductor fabrication equipment has traditionally represented a large barrier to entry for groups seeking to develop or commercialize novel micro- and nanoscale devices. Much of the cost barrier stems from the large size of the substrates processed in this equipment, and the associated complexity of maintaining consistent operation across the full substrate area. By scaling the substrate size down from the 150-300 mm diameter sizes commonly seen in today's production environments, the capital cost and physical footprint of tools for micro- and nanoscale fabrication can be dramatically decreased, while still retaining a similarly high level of performance. In this work, an ultra-low cost inductively-coupled plasma chemical vapor deposition (ICPCVD) system for processing substrates up to 50.8 mm (2") in diameter is presented. The ICPCVD system is built within a modular vacuum tool architecture that allows sections of the full tool to be easily and inexpensively replaced to adapt to new processing conditions or provide additional functionality. The system uses a non-pyrophoric mixture of silane (1.5% in helium) and low substrate temperatures ( : 150*C) to deposit uniform silicon-based films with a high quality comparable to films deposited in research-grade commercial tools. Using response surface methods, the performance of the ICP-CVD system has been characterized for both silicon dioxide and silicon nitride films, and repeatable control of the deposited film properties, including deposition rate, index of refraction, film stress, and density, has been demonstrated.en_US
dc.description.statementofresponsibilityby Parker Andrew Gould.en_US
dc.format.extent235 pagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsMIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleDesign, fabrication, and characterization of an ultra-low cost inductively-coupled plasma chemical vapor deposition tool for micro- and nanofabricationen_US
dc.typeThesisen_US
dc.description.degreePh. D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.identifier.oclc1122791222en_US
dc.description.collectionPh.D. Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Scienceen_US
dspace.imported2019-10-11T22:12:08Zen_US
mit.thesis.degreeDoctoralen_US
mit.thesis.departmentEECSen_US


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