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dc.contributor.advisorRaymond C. Ashoori.en_US
dc.contributor.authorDemir, Ahmet,Ph. D.Massachusetts Institute of Technology.en_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Physics.en_US
dc.date.accessioned2020-01-08T19:43:38Z
dc.date.available2020-01-08T19:43:38Z
dc.date.copyright2019en_US
dc.date.issued2019en_US
dc.identifier.urihttps://hdl.handle.net/1721.1/123416
dc.descriptionThesis: Ph. D., Massachusetts Institute of Technology, Department of Physics, 2019en_US
dc.descriptionCataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (pages 111-115).en_US
dc.description.abstractIn this work, we created laterally large and low disorder quantum well based quantum dots to study single electron additions to two dimensional electron gas systems ( 2DEG). Their single electron addition spectra has been studied using a capacitance technique in a dilution refrigerator. As a function of magnetic field and density, we measured the single electron addition energies from a completely empty dot, up to dot occupancies of thousands of electrons. For small dots, at low density and magnetic field, we found the expected non-interacting Fock-Darwin behavior. However, at high density and high magnetic field, we observed deviations from single particle picture which is suggestive of more novel physics. To observe collective behaviour in quantum dots, we created relatively larger quantum dots so that the dot would behave as a small two dimensional (2D) system.en_US
dc.description.abstractHowever, observing such behavior has been challenging due to the difficulty in the fabrication of sufficiently high quality devices. The quantum dots we are working on differ from those of previous works in that they do not contain any modulation doping nor a Schottky barrier above the dot. This new design eliminates all unscreened dopants. Instead, we populate carriers electrostatically by an external gate. Here, we report the observation in the addition spectra of interaction driven localized states and isolated tunneling to edge states. We see electron additions to the edge states between filling factors v = 1 and v = 2 with single flux quantum (h/e) periodicity in magnetic field. Remarkably, between filling factors V = 2 and V = 5, we observe the pairing of electron additions to states at the edges of the quantum dots with a corresponding 2e charge tunneling. Near filling factor 5/2 and at fixed gate voltage, these twice-height peaks appear uniformly with a periodicity of h/2e.en_US
dc.description.abstractAt other filling factors in the range v = 2 - 5, the mean periodicity for the twice-height electron peaks remains h/2e, but the twice-height peaks are instead further bunched into pairs, with pairs spaced h/e apart. The filling factors for the observed h/2e periodicity coincide with those of a pairing phenomenon seen in conductance oscillations in Fabry-Perot interferometers[1] that indicated inter-channel entanglement between edge channels. Moreover, the unusual 2-electron Coulomb blockade peaks suggest a pair tunneling effect that involves electron correlations that arise in the quantum dot.en_US
dc.description.statementofresponsibilityby Ahmet Demir.en_US
dc.format.extent115 pagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsMIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectPhysics.en_US
dc.titlePairing of single electron additions at the edge of an ultraclean Mini 2DEGen_US
dc.typeThesisen_US
dc.description.degreePh. D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.identifier.oclc1134392166en_US
dc.description.collectionPh.D. Massachusetts Institute of Technology, Department of Physicsen_US
dspace.imported2020-01-08T19:43:37Zen_US
mit.thesis.degreeDoctoralen_US
mit.thesis.departmentPhysen_US


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