Development of vertical bulk gallium nitride power devices
Author(s)Muñoz, Ayrton D.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
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Gallium nitride (GaN) is a promising material for power electronics due to its outstanding properties, such as high critical electric field and large bandgap. Despite its superior intrinsic properties, fabrication processes and technology for vertical GaN power electronics is still not as mature as in conventional materials. This thesis covers three aspects of vertical power devices on bulk GaN to increase their reliability and performance. The first is the breakdown behavior of GaN under high electric fields. Vertical Schottky diodes with multi-finger anodes are simulated, fabricated and characterized. Evidence of impact ionization and signs of avalanche breakdown are shown. The second aspect is scalable fabrication technologies for vertical power FinFETs. Key processing stesps are refined and demonstrated on large-area devices. The final topic covered is GaN superjunction (SJ) technology in the context vertical power FinFETs. The SJ FinFET concept is first introduced then an underutilized method for p-type doping GaN is explored as an alternative to conventional p-type regrowth and ion implantation. Finally, the proposed GaN SJ FinFET is investigated with simulations. Various standard SJ parameters are optimized and a novel electric field management technique is proposed.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2019Cataloged from student-submitted PDF version of thesis.Includes bibliographical references (pages 88-92).
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology
Electrical Engineering and Computer Science.