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dc.contributor.authorFitzgerald, Eugene A
dc.date.accessioned2020-09-09T11:33:48Z
dc.date.available2020-09-09T11:33:48Z
dc.date.issued2018-11
dc.date.submitted2018-09
dc.identifier.issn2158-3226
dc.identifier.urihttps://hdl.handle.net/1721.1/127207
dc.description.abstractWe report performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) fabricated on epitaxial films directly grown onto 200 mm silicon (Si) substrates using a thin 100% germanium (Ge) buffer layer. Both buffer layer and device layers were grown epitaxially using metalorganic chemical vapor deposition (MOCVD). With the assistance of numerical simulation, we were able to achieve high performance GaAs HBTs with DC current gain of ∼100 through optimizing the base doping concentration (C-doped, ∼ 1.9×1019/cm3), base layer thickness (∼55 nm), and the sub-collector doping concentration (Te-doped, > 5×1018/cm3). The breakdown voltage at base (BVceo) of higher than 9.43 V was realized with variation of < 3% across the 200 mm wafer. These results could enable applications such as power amplifiers for mobile phone handsets and monolithic integration of HBTs with standard Si-CMOS transistors on a common Si platform.en_US
dc.description.sponsorshipNational Research Foundation (U.S.) (Grant NRF-CRP12-2013-04)en_US
dc.language.isoen
dc.publisherAIP Publishingen_US
dc.relation.isversionof10.1063/1.5058717en_US
dc.rightsCreative Commons Attribution 4.0 International licenseen_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.sourceAmerican Institute of Physics (AIP)en_US
dc.titleIn₀.₄₉ Ga₀.₅₁ P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrationsen_US
dc.typeArticleen_US
dc.identifier.citationWang, Yue et al. “In₀.₄₉ Ga₀.₅₁ P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations.” AIP Advances, 8, 11 (Novemver 2018): 115132 © 2018 The Author(s)en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.relation.journalAIP Advancesen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2020-09-08T18:28:52Z
dspace.date.submission2020-09-08T18:28:55Z
mit.journal.volume8en_US
mit.journal.issue11en_US
mit.licensePUBLISHER_CC


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