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dc.contributor.advisorVladimir Bulović and Jeffery H. Lang.en_US
dc.contributor.authorGao, Mingye.en_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2020-09-15T21:53:12Z
dc.date.available2020-09-15T21:53:12Z
dc.date.copyright2020en_US
dc.date.issued2020en_US
dc.identifier.urihttps://hdl.handle.net/1721.1/127343
dc.descriptionThesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, May, 2020en_US
dc.descriptionCataloged from the official PDF of thesis.en_US
dc.descriptionIncludes bibliographical references (pages 95-98).en_US
dc.description.abstractNanoelectromechanical (NEM) switches are considered to be a promising substitute for conventional switching because they can provide a large on/off current ratio as well as near-zero current leakage during off-state. However, the stiction problem, which is caused by the significant effect of van der Waals force to the nanoscale structure, can easily lead to the permanent failure of the conventional NEM switches, thus lowering their reliability; such an issue also prevents the further miniaturization of NEM switches, thus leading to the high actuation voltage of them. The non-scalable fabrication flow of NEM switches also restricts their applications and popularization in industry. To realize the ultra-low power consumption while solving the typical problems encountered by the conventional NEM switches, a novel NEM switch called squitch is proposed in this thesis.en_US
dc.description.abstractThe functionality of the squitch is based on the electron tunneling; specifically, the current through such a device can be modulated by controlling the thickness of a compressible molecule film, which serves as the tunneling barrier between an movable and a pair of fixed electrodes. Graphene is chosen as the material of the top electrode because it can be easily patterned and transferred; besides, partially getting rid of the metallic materials can help us determine if the electromigration will affect the device performance. Through modulating a 5nm-thick PEG-thiol monolayer, a on/off current ratio ranging from 10¹ to 10² can be achieved; a ~1 V actuation voltage and a sub-1 V hysteresis are also realized. The device can also survive 10 to 100 cycles of operations, showing an acceptable durability. Besides, we prove that the electromigration is not the major factor that causes the degradation behavior of the squitch.en_US
dc.description.abstractThe yield of the whole fabrication process falls in the range of 20% to 40%, which can further improved by modifying the methods of transferring graphene and exploring new molecules with the appropriate mechanical properties.en_US
dc.description.statementofresponsibilityby Mingye Gao.en_US
dc.format.extent98 pagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsMIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleApplication of graphene in designing tunneling nanoelectromechanical switchesen_US
dc.typeThesisen_US
dc.description.degreeS.M.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.identifier.oclc1192475780en_US
dc.description.collectionS.M. Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Scienceen_US
dspace.imported2020-09-15T21:53:11Zen_US
mit.thesis.degreeMasteren_US
mit.thesis.departmentEECSen_US


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