Show simple item record

dc.contributor.authorSun, Jiamian
dc.contributor.authorLi, Haiwang
dc.contributor.authorWu, Sifan
dc.contributor.authorXu, Tiantong
dc.contributor.authorLi, Hanqing
dc.contributor.authorWu, Hanxiao
dc.contributor.authorXia, Shuangzhi
dc.date.accessioned2020-09-28T15:07:49Z
dc.date.available2020-09-28T15:07:49Z
dc.date.issued2020-09
dc.date.submitted2020-08
dc.identifier.issn2072-666X
dc.identifier.urihttps://hdl.handle.net/1721.1/127765
dc.description.abstractIntegrated 2D spiral inductors possess low inductance per unit area, which limits their application range. However, the state of investigation into the lumped-element parameter extraction method for integrated 3D in-chip multi-turn solenoid inductors, which possess higher inductance per unit area, is inadequate. This type of inductor can thus not be incorporated into fast computer-aided design (CAD)-assisted circuit design. In this study, we propose a broadband two-port physics-based equivalent circuit model for 3D microelectromechanical system (MEMS) in-chip solenoid inductors that are embedded in silicon substrates. The circuit model was composed of lumped elements with specific physical meanings and incorporated complicated parasitics resulting from eddy currents, skin effects, and proximity effects. Based on this model, we presented a lumped-element parameter extraction method using the electronic design automation software package, Agilent Advanced Design System (ADS). This method proved to be consistent with the results of two-port testing at low to self-resonant frequencies and could thus be used in CAD-assisted circuit design. The lumped element value variations were analyzed based on the physical meaning of the elements with respect to variations in structures and the substrate resistivity of inductors. This provided a novel perspective in terms of the design of integrated in-chip solenoid inductors.en_US
dc.description.sponsorshipNational Natural Science Foundation of China (Grant 51906008 and 51822602)en_US
dc.description.sponsorshipHigh-Speed Moving Component Dynamic Tester (grant 2017YFF0107601 and 2017YFF0107604)en_US
dc.publisherMultidisciplinary Digital Publishing Instituteen_US
dc.relation.isversionof10.3390/mi11090836en_US
dc.rightsCreative Commons Attributionen_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.sourceMultidisciplinary Digital Publishing Instituteen_US
dc.titleBroadband lumped-element parameter extraction method of two-port 3D MEMS in-chip solenoid inductors based on a physics-based equivalent circuit modelen_US
dc.typeArticleen_US
dc.identifier.citationSun, Jiamian et al. "Broadband lumped-element parameter extraction method of two-port 3D MEMS in-chip solenoid inductors based on a physics-based equivalent circuit model." Micromachines 11, 9 (September 2020): 836 ©2020 Author(s)en_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.relation.journalMicromachinesen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2020-09-07T22:01:48Z
dspace.date.submission2020-09-07T22:01:48Z
mit.journal.volume11en_US
mit.journal.issue9en_US
mit.licensePUBLISHER_CC


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record