Spintronics using low magnetization materials

Abstract

Information storage using magnetic materials is accomplished by controlling and sensing the magnetic moment orientation of nanoscale ferromagnets. In order to improve performance and compete with existing and alternative emerging memory technologies, further improvements in device switching speeds, density, and energy efficiency are needed. To address these issues, we explore the use of low magnetization ferrimagnetic and antiferromagnetic materials as information storage mediums. We demonstrate the feasibility of spin-torque switching in compensated ferrimagnetic systems, along with increased switching speeds. We also show the existence of resistive artifacts in current-induced antiferromagnetic switching, which need to be removed if practical devices are to be realized. Finally we achieve spin wave transmission in ferrimagnetic insulators with perpendicular magnetization, which is a promising step forward for the development of spin wave computing devices. Magnetic devices using small moment magnets promise a spintronic platform for fast, dense, and energy efficient memory technology.