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dc.contributor.advisorDirk R. Englund.en_US
dc.contributor.authorLu, Tsung-Ju Jeff.en_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2021-01-06T19:36:23Z
dc.date.available2021-01-06T19:36:23Z
dc.date.copyright2020en_US
dc.date.issued2020en_US
dc.identifier.urihttps://hdl.handle.net/1721.1/129262
dc.descriptionThesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, September, 2020en_US
dc.descriptionCataloged from student-submitted PDF of thesis.en_US
dc.descriptionIncludes bibliographical references (pages 131-148).en_US
dc.description.abstractDevelopment of quantum networks is necessary for quantum communication and distributed quantum computing. This requires the distribution of entanglement across many stationary qubits in the network. Solid state defect quantum emitters (QEs) can function as light-matter interfaces for connecting the internal electron spin states acting as stationary qubits and quantum states of emitted photonic qubits. Entanglement can then be generated between distant spin qubits by heralded optical measurements of the emitted photons over fibers. Thus, a key challenge is the control of many QEs, as well as efficient routing and detection of the spin-state-dependent photons. With QEs being in solid-state, we can achieve the scaling needed through miniaturization of the control and routing components by using integrated electronics and photonics.en_US
dc.description.abstractHowever, advanced and commonly-used integrated photonic platforms produced in foundries are based on silicon and silicon nitride, which are incompatible with the short wavelength emission of leading solid-state QEs. As such, there is a need for a wide-bandgap integrated photonics platform for quantum technologies. This thesis first develops photonic integrated circuits (PICs) based on aluminum nitride (AlN) on sapphire, which enables low-loss routing from the visible down to the ultraviolet spectrum. We will then show that thin film AlN is also host to bright, high-purity QEs compatible with monolithic PIC integration. As solid-state emitters in diamond are among the promising qubits for quantum networks due to their efficient optical interfaces and minute-scale spin coherence, we will then present on the large-scale heterogeneous assembly of diamond-waveguide-coupled QEs into AlN photonic circuits with in situ wavelength tuning.en_US
dc.description.abstractTo demonstrate the versatility of this photonics platform, we will lastly discuss the heterogeneous integration of QEs in 2D materials and detectors. These advances show that AlN is a promising and versatile wide-bandgap integrated photonics platform for quantum information processing.en_US
dc.description.statementofresponsibilityby Tsung-Ju Jeff Lu.en_US
dc.format.extent148 pagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsMIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleWide-bandgap integrated photonics for quantum technologiesen_US
dc.typeThesisen_US
dc.description.degreePh. D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.identifier.oclc1227521074en_US
dc.description.collectionPh.D. Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Scienceen_US
dspace.imported2021-01-06T19:36:22Zen_US
mit.thesis.degreeDoctoralen_US
mit.thesis.departmentEECSen_US


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