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dc.contributor.advisorRobert H. Kingston.en_US
dc.contributor.authorSyz, Jing-Kai.en_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2021-02-02T18:54:34Z
dc.date.available2021-02-02T18:54:34Z
dc.date.copyright1988en_US
dc.date.issued1988en_US
dc.identifier.urihttps://hdl.handle.net/1721.1/129636
dc.descriptionThesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1988.en_US
dc.descriptionVita.en_US
dc.descriptionBibliography: leaves 114-117.en_US
dc.description.statementofresponsibilityby Jing-Kai Syz.en_US
dc.format.extent118 leavesen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsMIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleThermal annealing effects on boron-implanted HgCdTe diodesen_US
dc.typeThesisen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.identifier.oclc18720614en_US
dc.description.collectionThesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1988.en_US
dspace.imported2021-02-02T18:54:33Zen_US
mit.thesis.degreeMasteren_US
mit.thesis.departmentEECSen_US


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