Large modulation capacity in graphene-based slot modulators by enhanced hybrid plasmonic effects
Author(s)
Hao, Ran; Ye, Ziwei; Gu, YiJie; Peng, Xiliang; Chen, Hongsheng; Li, Erping; Hao, Ran; Ye, Ziwei; Gu, YiJie; Peng, Xiliang; Chen, Hongsheng; Li, Erping; ... Show more Show less![Thumbnail](/bitstream/handle/1721.1/132164.2/s41598-018-34914-6.pdf.jpg?sequence=2&isAllowed=y)
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© 2018, The Author(s). We present an effective scheme to improve the modulation capacity in graphene-based silicon modulator by employing the double slots configuration with hybrid plasmonic effects. Two modulators, i.e., metal-insulator-metal and insulator-metal-insulator configurations have been demonstrated, showing that the double slots design can significantly improve the modulation efficiency. The obtained modulation efficiency is up to 0.525 dB/μm per graphene layer, far exceeding previous studies. It can be found that the light-graphene interaction plays a pivotal role in the modulation efficiency, whereas the height of metal has profound influence on the modulation. Our results may promote various future modulation devices based on graphene.
Date issued
2018-11Department
Massachusetts Institute of Technology. Research Laboratory of ElectronicsJournal
Scientific Reports
Citation
Hao, Ran, Ziwei Ye, YiJie Gu, Xiliang Peng, Hongsheng Chen, and Erping Li. “Large Modulation Capacity in Graphene-Based Slot Modulators by Enhanced Hybrid Plasmonic Effects.” Scientific Reports 8, no. 1 (November 15, 2018). doi:10.1038/s41598-018-34914-6.
Version: Final published version
ISSN
2045-2322
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