Relaxation effects in MOS devices due to tunnel exchange with near-interface oxide traps

Author(s)
Tewksbury, Theodore L. (Theodore Locke)
Thumbnail
DownloadFull printable version (21.11Mb)
Advisor
Hae-Seung Lee.
Terms of use
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/13238 http://dspace.mit.edu/handle/1721.1/7582
Metadata
Show full item record
Description
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1992.
 
Includes bibliographical references (p. 299-317).
 
Date issued
1992
URI
http://dspace.mit.edu/handle/1721.1/13238
http://hdl.handle.net/1721.1/13238
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Publisher
Massachusetts Institute of Technology
Keywords
Electrical Engineering and Computer Science
Collections