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Self-diffusion in silicon carbide.

dc.contributor.advisorRobert L. Coble.en_US
dc.contributor.authorGhoshtagore, Rathindra Nathen_US
dc.date.accessioned2005-09-21T21:48:28Z
dc.date.available2005-09-21T21:48:28Z
dc.date.issued1965en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/13369
dc.descriptionMassachusetts Institute of Technology. Dept. of Metallurgy. Thesis. 1965. Sc.D.en_US
dc.format.extent122, [76] leavesen_US
dc.format.extent9310373 bytes
dc.format.extent9310131 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectMetallurgyen_US
dc.titleSelf-diffusion in silicon carbide.en_US
dc.typeThesisen_US
dc.description.degreeSc.D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Metallurgyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.identifier.oclc25360843en_US


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