Noise Contribution to Switching Current Distributions in NbN Nanowires
Author(s)
Qu, Ashley; Zhu, Di; Berggren, Karl K
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© 2019 IEEE. The working mechanism behind superconducting nanowire-based devices is the electrothermal transition from the superconducting to normal state, at which the point is known as the switching current. Due to the stochastic nature of nanowires from thermal fluctuations, quantum fluctuations, electrical noise, and black-body radiation, superconducting nanowire-based devices suffer from low repeatability in measurements. Here, we use a tapered and non-tapered NbN nanowire to identify and quantify the effects of ramp rate on the switching current distribution at 1 K. We also plan to expand the model presented by McCaughan et al that includes the noise of the measurement system.
Date issued
2019Department
Massachusetts Institute of Technology. Research Laboratory of Electronics; Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
ISEC 2019 - International Superconductive Electronics Conference
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Qu, Ashley, Zhu, Di and Berggren, Karl K. 2019. "Noise Contribution to Switching Current Distributions in NbN Nanowires." ISEC 2019 - International Superconductive Electronics Conference.
Version: Author's final manuscript