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dc.contributor.advisorAlan L. McWhorter.en_US
dc.contributor.authorSmith, Frank Williamen_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2005-08-10T19:15:39Z
dc.date.available2005-08-10T19:15:39Z
dc.date.copyright1990en_US
dc.date.issued1990en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/14039
dc.descriptionThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1990.en_US
dc.descriptionVita.en_US
dc.descriptionIncludes bibliographical references (leaves 256-265).en_US
dc.description.statementofresponsibilityby Frank William Smith III.en_US
dc.format.extent266 leavesen_US
dc.format.extent18606707 bytes
dc.format.extent18606465 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleThe device applications and characterization of nonstoichiometric GaAs grown by molecular beam epitaxyen_US
dc.typeThesisen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc23281999en_US


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