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The correspondence of dislocation etch pits revealed on (111) and (100) surfaces of germanium grown in the <100> direction.

dc.contributor.advisorAugust F. Witt.
dc.contributor.authorBoylan, John Francis.en_US
dc.date.accessioned2022-02-16T22:12:30Z
dc.date.available2022-02-16T22:12:30Z
dc.date.copyright1975en_US
dc.date.issued1975en_US
dc.identifier.urihttps://hdl.handle.net/1721.1/140446
dc.descriptionThesis: B.S., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 1975en_US
dc.descriptionIncludes bibliographical references.en_US
dc.format.extent65 leavesen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsMIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectMaterials Science and Engineeringen_US
dc.subject.lcshDislocations in crystals.en_US
dc.subject.lcshGermanium.en_US
dc.titleThe correspondence of dislocation etch pits revealed on (111) and (100) surfaces of germanium grown in the <100> direction.en_US
dc.typeThesisen_US
dc.description.degreeB.S.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.identifier.oclc02193257en_US
dc.description.collectionB.S. Massachusetts Institute of Technology, Department of Materials Science and Engineeringen_US
dspace.imported2022-02-16T22:12:30Zen_US
mit.thesis.degreeBacheloren_US
mit.thesis.departmentMatScien_US


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