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Emission-tailored GaAsSb:Si luminescent diodes.

dc.contributor.authorBrierley, Steven Kenneth.en_US
dc.date.accessioned2022-04-01T18:29:24Z
dc.date.available2022-04-01T18:29:24Z
dc.date.copyright1975en_US
dc.date.issued1975en_US
dc.identifier.urihttps://hdl.handle.net/1721.1/141463
dc.descriptionThesis: Elec. E., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 1975en_US
dc.descriptionIncludes bibliographical references.en_US
dc.format.extent79 leavesen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsMIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Scienceen_US
dc.subject.lcshLight emitting diodes.en_US
dc.subject.lcshGallium compounds.en_US
dc.subject.lcshEpitaxy.en_US
dc.titleEmission-tailored GaAsSb:Si luminescent diodes.en_US
dc.typeThesisen_US
dc.description.degreeElec. E.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.identifier.oclc02149770en_US
dc.description.collectionElec. E. Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Scienceen_US
dspace.imported2022-04-01T18:29:24Zen_US
mit.thesis.degreeEngineeren_US


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