Spin-textured Chern bands in AB-stacked transition metal dichalcogenide bilayers
Author(s)
Zhang, Yang; Devakul, Trithep; Fu, Liang
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While transition-metal dichalcogenide (TMD)–based moir ́e mate-rials have been shown to host various correlated electronicphenomena, topological states have not been experimentallyobserved until now [T. Li et al., Quantum anomalous Halleffect from intertwined moir ́e bands. arXiv [Preprint] (2021).https://arxiv.org/abs/2107.01796 (Accessed 5 July 2021)]. In thiswork, using first-principle calculations and continuum modeling,we reveal the displacement field–induced topological moir ́e bandsin AB-stacked TMD heterobilayer MoTe2/WSe2. Valley-contrastingChern bands with nontrivial spin texture are formed from inter-layer hybridization between MoTe2and WSe2bands of nominallyopposite spins. Our study establishes a recipe for creating topo-logical bands in AB-stacked TMD bilayers in general, which pro-vides a highly tunable platform for realizing quantum-spin Halland interaction-induced quantum anomalous Hall effects
Date issued
2021-09Department
Massachusetts Institute of Technology. Department of PhysicsJournal
Proceedings of the National Academy of Sciences
Publisher
National Academy of Sciences
Citation
Zhang, Yang, Devakul, Trithep and Fu, Liang. 2021. "Spin-textured Chern bands in AB-stacked transition metal dichalcogenide bilayers." Proceedings of the National Academy of Sciences of the United States of America, 118 (36).
Version: Final published version
ISSN
0027-8424
1091-6490