dc.contributor.author | Wang, Joel I-J | |
dc.contributor.author | Yamoah, Megan A | |
dc.contributor.author | Li, Qing | |
dc.contributor.author | Karamlou, Amir H | |
dc.contributor.author | Dinh, Thao | |
dc.contributor.author | Kannan, Bharath | |
dc.contributor.author | Braumüller, Jochen | |
dc.contributor.author | Kim, David | |
dc.contributor.author | Melville, Alexander J | |
dc.contributor.author | Muschinske, Sarah E | |
dc.contributor.author | Niedzielski, Bethany M | |
dc.contributor.author | Serniak, Kyle | |
dc.contributor.author | Sung, Youngkyu | |
dc.contributor.author | Winik, Roni | |
dc.contributor.author | Yoder, Jonilyn L | |
dc.contributor.author | Schwartz, Mollie E | |
dc.contributor.author | Watanabe, Kenji | |
dc.contributor.author | Taniguchi, Takashi | |
dc.contributor.author | Orlando, Terry P | |
dc.contributor.author | Gustavsson, Simon | |
dc.contributor.author | Jarillo-Herrero, Pablo | |
dc.contributor.author | Oliver, William D | |
dc.date.accessioned | 2022-04-19T18:24:04Z | |
dc.date.available | 2022-04-19T18:24:04Z | |
dc.date.issued | 2022-04 | |
dc.identifier.uri | https://hdl.handle.net/1721.1/141952 | |
dc.description.abstract | Dielectrics with low loss at microwave frequencies are imperative for
high-coherence solid-state quantum computing platforms. We study the dielectric
loss of hexagonal boron nitride (hBN) thin films in the microwave regime by
measuring the quality factor of parallel-plate capacitors (PPCs) made of
NbSe$_{2}$-hBN-NbSe$_{2}$ heterostructures integrated into superconducting
circuits. The extracted microwave loss tangent of hBN is bounded to be at most
in the mid-10$^{-6}$ range in the low temperature, single-photon regime. We
integrate hBN PPCs with aluminum Josephson junctions to realize transmon qubits
with coherence times reaching 25 $\mu$s, consistent with the hBN loss tangent
inferred from resonator measurements. The hBN PPC reduces the qubit feature
size by approximately two-orders of magnitude compared to conventional
all-aluminum coplanar transmons. Our results establish hBN as a promising
dielectric for building high-coherence quantum circuits with substantially
reduced footprint and, with a high energy participation that helps to reduce
unwanted qubit cross-talk. | en_US |
dc.language.iso | en | |
dc.publisher | Springer Science and Business Media LLC | en_US |
dc.relation.isversionof | 10.1038/s41563-021-01187-w | en_US |
dc.rights | Creative Commons Attribution-Noncommercial-Share Alike | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-sa/4.0/ | en_US |
dc.source | arXiv | en_US |
dc.title | Hexagonal boron nitride as a low-loss dielectric for superconducting quantum circuits and qubits | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Wang, Joel I-J, Yamoah, Megan A, Li, Qing, Karamlou, Amir H, Dinh, Thao et al. 2022. "Hexagonal boron nitride as a low-loss dielectric for superconducting quantum circuits and qubits." Nature Materials, 21 (4). | |
dc.contributor.department | Massachusetts Institute of Technology. Research Laboratory of Electronics | |
dc.contributor.department | Massachusetts Institute of Technology. Department of Physics | |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | |
dc.contributor.department | Lincoln Laboratory | |
dc.relation.journal | Nature Materials | en_US |
dc.eprint.version | Author's final manuscript | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dc.date.updated | 2022-04-19T18:16:21Z | |
dspace.orderedauthors | Wang, JI-J; Yamoah, MA; Li, Q; Karamlou, AH; Dinh, T; Kannan, B; Braumüller, J; Kim, D; Melville, AJ; Muschinske, SE; Niedzielski, BM; Serniak, K; Sung, Y; Winik, R; Yoder, JL; Schwartz, ME; Watanabe, K; Taniguchi, T; Orlando, TP; Gustavsson, S; Jarillo-Herrero, P; Oliver, WD | en_US |
dspace.date.submission | 2022-04-19T18:16:29Z | |
mit.journal.volume | 21 | en_US |
mit.journal.issue | 4 | en_US |
mit.license | OPEN_ACCESS_POLICY | |
mit.metadata.status | Authority Work and Publication Information Needed | en_US |