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dc.contributor.authorWang, Joel I-J
dc.contributor.authorYamoah, Megan A
dc.contributor.authorLi, Qing
dc.contributor.authorKaramlou, Amir H
dc.contributor.authorDinh, Thao
dc.contributor.authorKannan, Bharath
dc.contributor.authorBraumüller, Jochen
dc.contributor.authorKim, David
dc.contributor.authorMelville, Alexander J
dc.contributor.authorMuschinske, Sarah E
dc.contributor.authorNiedzielski, Bethany M
dc.contributor.authorSerniak, Kyle
dc.contributor.authorSung, Youngkyu
dc.contributor.authorWinik, Roni
dc.contributor.authorYoder, Jonilyn L
dc.contributor.authorSchwartz, Mollie E
dc.contributor.authorWatanabe, Kenji
dc.contributor.authorTaniguchi, Takashi
dc.contributor.authorOrlando, Terry P
dc.contributor.authorGustavsson, Simon
dc.contributor.authorJarillo-Herrero, Pablo
dc.contributor.authorOliver, William D
dc.date.accessioned2022-04-19T18:24:04Z
dc.date.available2022-04-19T18:24:04Z
dc.date.issued2022-04
dc.identifier.urihttps://hdl.handle.net/1721.1/141952
dc.description.abstractDielectrics with low loss at microwave frequencies are imperative for high-coherence solid-state quantum computing platforms. We study the dielectric loss of hexagonal boron nitride (hBN) thin films in the microwave regime by measuring the quality factor of parallel-plate capacitors (PPCs) made of NbSe$_{2}$-hBN-NbSe$_{2}$ heterostructures integrated into superconducting circuits. The extracted microwave loss tangent of hBN is bounded to be at most in the mid-10$^{-6}$ range in the low temperature, single-photon regime. We integrate hBN PPCs with aluminum Josephson junctions to realize transmon qubits with coherence times reaching 25 $\mu$s, consistent with the hBN loss tangent inferred from resonator measurements. The hBN PPC reduces the qubit feature size by approximately two-orders of magnitude compared to conventional all-aluminum coplanar transmons. Our results establish hBN as a promising dielectric for building high-coherence quantum circuits with substantially reduced footprint and, with a high energy participation that helps to reduce unwanted qubit cross-talk.en_US
dc.language.isoen
dc.publisherSpringer Science and Business Media LLCen_US
dc.relation.isversionof10.1038/s41563-021-01187-wen_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourcearXiven_US
dc.titleHexagonal boron nitride as a low-loss dielectric for superconducting quantum circuits and qubitsen_US
dc.typeArticleen_US
dc.identifier.citationWang, Joel I-J, Yamoah, Megan A, Li, Qing, Karamlou, Amir H, Dinh, Thao et al. 2022. "Hexagonal boron nitride as a low-loss dielectric for superconducting quantum circuits and qubits." Nature Materials, 21 (4).
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronics
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physics
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.contributor.departmentLincoln Laboratory
dc.relation.journalNature Materialsen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2022-04-19T18:16:21Z
dspace.orderedauthorsWang, JI-J; Yamoah, MA; Li, Q; Karamlou, AH; Dinh, T; Kannan, B; Braumüller, J; Kim, D; Melville, AJ; Muschinske, SE; Niedzielski, BM; Serniak, K; Sung, Y; Winik, R; Yoder, JL; Schwartz, ME; Watanabe, K; Taniguchi, T; Orlando, TP; Gustavsson, S; Jarillo-Herrero, P; Oliver, WDen_US
dspace.date.submission2022-04-19T18:16:29Z
mit.journal.volume21en_US
mit.journal.issue4en_US
mit.licenseOPEN_ACCESS_POLICY
mit.metadata.statusAuthority Work and Publication Information Neededen_US


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