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TCAD-Informed Surrogate Models of Semiconductor Devices

Author(s)
Chinnery, Samuel B.
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Advisor
Edelman, Alan
Rackauckas, Christopher
Terms of use
In Copyright - Educational Use Permitted Copyright MIT http://rightsstatements.org/page/InC-EDU/1.0/
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Abstract
Extensive research has been conducted over the last half-century to develop models of semiconductor devices for use in circuit analysis and simulation. Such models typically fall into one of two categories: “Cheap” analytical models that can be solved quickly but introduce significant error, and “expensive” physics-based models that achieve high accuracy at the price of prohibitive computation time. As electronic circuits grow to contain billions of active devices, there is a pressing need for new models that are both accurate and fast to compute. In this thesis, we introduce Semiconductors.jl, a new semiconductor simulation tool written in the Julia programming language. We use Semiconductors.jl to implement performant surrogate models that approximate the behavior of fine-grained technology computer-aided design (TCAD) device models using a coarsified grid. The resulting surrogate models are shown to approximate the current-voltage characteristics of the fine-grained models to within a maximum error of 0.1% while using less than one tenth as many discretization nodes as the fine-grained baseline model.
Date issued
2022-05
URI
https://hdl.handle.net/1721.1/144946
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Publisher
Massachusetts Institute of Technology

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