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A superconducting memory switch based on the principles of flux-flow resistivity

dc.contributor.advisorJonathan B. Green and Terry P. Orlando.en_US
dc.contributor.authorKraenzel, Carl Josephen_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Physics.en_US
dc.date.accessioned2005-08-09T18:05:11Z
dc.date.available2005-08-09T18:05:11Z
dc.date.copyright1989en_US
dc.date.issued1989en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/14530
dc.descriptionThesis (B.S.)--Massachusetts Institute of Technology, Dept. of Physics, 1989.en_US
dc.descriptionIncludes bibliographical references (leaves 124-126).en_US
dc.description.statementofresponsibilityby Carl Joseph Kraenzel.en_US
dc.format.extent126 leavesen_US
dc.format.extent8744737 bytes
dc.format.extent8744494 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectPhysics.en_US
dc.titleA superconducting memory switch based on the principles of flux-flow resistivityen_US
dc.typeThesisen_US
dc.description.degreeB.S.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physics
dc.identifier.oclc20972831en_US


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