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On the growth of semiconductor-based epitaxial and oxide films from low energy ion beams

dc.contributor.advisorNicole Herbots.
dc.contributor.authorVancauwenberghe, Olivier P. J.en_US
dc.date.accessioned2023-02-07T20:21:41Z
dc.date.available2023-02-07T20:21:41Z
dc.date.copyright1992en_US
dc.date.issued1992en_US
dc.identifier.urihttps://hdl.handle.net/1721.1/147953
dc.descriptionThesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 1992en_US
dc.descriptionVita.en_US
dc.descriptionIncludes bibliographical references (leaves 205-212).en_US
dc.description.statementofresponsibilityby Olivier P.J. Vancauwenberghe.en_US
dc.format.extent213 leavesen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsMIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectMaterials Science and Engineeringen_US
dc.titleOn the growth of semiconductor-based epitaxial and oxide films from low energy ion beamsen_US
dc.typeThesisen_US
dc.description.degreePh. D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.identifier.oclc26408912en_US
dc.description.collectionPh. D. Massachusetts Institute of Technology, Department of Materials Science and Engineeringen_US
dspace.imported2023-02-07T20:21:41Zen_US
mit.thesis.degreeDoctoralen_US


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