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Simulation Tools for Digital LSI Design

Author(s)
Terman, Christopher J.
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DownloadMIT-LCS-TR-304.pdf (5.844Mb)
Advisor
Ward, Stephen A.
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Abstract
This thesis proposes a timing simulator (RSIM) based on a uniquely simple transistor model. RSIM allows a designer to determine both the functional and approximate timing characteristics of a MOS network with more accuracy than gate-level simulation, and using larger circuits than are accommodated by circuit analysis programs. In RSIM, transistors are modeled as resistors; the logic states of a transistor's terminal nodes determine its effective resistance.
Date issued
1983-09
URI
https://hdl.handle.net/1721.1/149580
Series/Report no.
MIT-LCS-TR-304

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  • LCS Technical Reports (1974 - 2003)

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