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dc.contributor.advisorOliver, William D.
dc.contributor.authorZaman, Sameia
dc.date.accessioned2024-03-21T19:12:27Z
dc.date.available2024-03-21T19:12:27Z
dc.date.issued2024-02
dc.date.submitted2024-02-21T17:10:22.205Z
dc.identifier.urihttps://hdl.handle.net/1721.1/153871
dc.description.abstractWedeveloped hybrid superconducting microwave resonators incorporating van der Waals (vdW) superconductors to explore the microwave response of superconducting 2D materials in the GHz regime. We first established a reliable technique to contact thin NbSe₂, entirely encapsulated with hexagonal Boron Nitride (hBN), with a coplanar Al resonator. Then we fabricated hybrid Al-NbSe₂ resonators and measured the kinetic inductance of thin NbSe₂ at low-temperature and low-photon number limits. In this thesis, we discuss the observed relation between the kinetic inductance and the thickness of the thin NbSe₂. Furthermore, we characterize DC bias current, and microwave power dependence of the kinetic inductance in the hybrid Al-NbSe₂ resonators. Our approach contributes to understanding the both DCand ACproperties of superconducting 2D materials with potential implications for their utilization in emerging technologies.
dc.publisherMassachusetts Institute of Technology
dc.rightsIn Copyright - Educational Use Permitted
dc.rightsCopyright retained by author(s)
dc.rights.urihttps://rightsstatements.org/page/InC-EDU/1.0/
dc.titleKinetic Inductance Characterization of Thin 2H-NbSe₂ Superconductor Using Circuit Quantum Electrodynamics
dc.typeThesis
dc.description.degreeS.M.
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
mit.thesis.degreeMaster
thesis.degree.nameMaster of Science in Electrical Engineering and Computer Science


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