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dc.contributor.advisorEnglund, Dirk
dc.contributor.authorChristen, Ian
dc.date.accessioned2025-03-27T16:57:28Z
dc.date.available2025-03-27T16:57:28Z
dc.date.issued2025-02
dc.date.submitted2025-03-04T17:27:25.660Z
dc.identifier.urihttps://hdl.handle.net/1721.1/158913
dc.description.abstractColor centers in diamond have emerged as leading atom-like quantum systems for applications spanning from quantum repeaters to sensors. However, the optical and spin properties of engineered diamond color centers are limited by crystal damage produced during ion implantation, crystal irradiation, and annealing. In this thesis, we develop advanced material processing methods and characterization techniques to address critical challenges in the formation of high-performance diamond color centers to advance towards the efficient creation of desired dopant-vacancy centers with minimal formation of deleterious multi-vacancy clusters.
dc.publisherMassachusetts Institute of Technology
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0)
dc.rightsCopyright retained by author(s)
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/
dc.titleAnnealing Techniques for Color Center Formation
dc.typeThesis
dc.description.degreeS.M.
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
mit.thesis.degreeMaster
thesis.degree.nameMaster of Science in Electrical Engineering and Computer Science


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