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dc.contributor.advisorJohn G. Kassakian.en_US
dc.contributor.authorHarm, Charles Edwarden_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2005-08-04T16:36:51Z
dc.date.available2005-08-04T16:36:51Z
dc.date.copyright1980en_US
dc.date.issued1980en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/16135
dc.descriptionThesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1980.en_US
dc.descriptionMICROFICHE COPY AVAILABLE IN ARCHIVES AND ENGINEERING.en_US
dc.descriptionIncludes bibliographical references.en_US
dc.description.statementofresponsibilityby Charles Edward Harm.en_US
dc.format.extent88 leavesen_US
dc.format.extent5009284 bytes
dc.format.extent5009042 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Science.en_US
dc.subject.lcshPower transistorsen_US
dc.subject.lcshField-effect transistorsen_US
dc.subject.lcshSwitching circuitsen_US
dc.subject.lcshElectric drivingen_US
dc.titlePower FETs in switching applicationsen_US
dc.typeThesisen_US
dc.description.degreeM.S.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc07902948en_US


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