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dc.contributor.advisorC.G. Fonstad.en_US
dc.contributor.authorKessler, Daniel Deanen_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2005-08-04T16:40:30Z
dc.date.available2005-08-04T16:40:30Z
dc.date.copyright1980en_US
dc.date.issued1980en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/16144
dc.descriptionThesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1980.en_US
dc.descriptionMICROFICHE COPY AVAILABLE IN ARCHIVES AND ENGINEERING.en_US
dc.descriptionIncludes bibliographical references.en_US
dc.description.statementofresponsibilityby Daniel Dean Kessler.en_US
dc.format.extent285 leavesen_US
dc.format.extent17601685 bytes
dc.format.extent17601442 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Science.en_US
dc.subject.lcshInfrared detectorsen_US
dc.subject.lcshPhotoconductive cellsen_US
dc.subject.lcshField-effect transistorsen_US
dc.titleDesign, fabrication and evaluation of a (Hg,Cd)Te junction field-effect photoconductoren_US
dc.typeThesisen_US
dc.description.degreeM.S.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc07916179en_US


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