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dc.contributor.advisorHarry L. Tuller.en_US
dc.contributor.authorStefanik, Todd Stanley, 1973-en_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Materials Science and Engineering.en_US
dc.date.accessioned2005-05-17T14:42:29Z
dc.date.available2005-05-17T14:42:29Z
dc.date.copyright2003en_US
dc.date.issued2004en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/16623
dc.descriptionThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, February 2004.en_US
dc.descriptionIncludes bibliographical references (p. 130-135).en_US
dc.descriptionThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.en_US
dc.description.abstractA defect chemistry model consistent with observed trends in the pO2 and temperature dependence of electrical conductivity in praseodymium cerium oxide (PCO) was developed. Four point DC conductivity measurements were made from 1 atm to 1018 atm p02 over isotherms ranging from 600-1 000ʻC in materials containing 0-20% Pr. A pO02-dependent ionic conductivity was observed at high pO2 values in compositions containing 0.5% and 1% Pr. This behavior was attributed to oxidation of Pr3+ to Pr4+ under oxidizing conditions, thereby decreasing the concentration of acceptor dopants in the PCO material. In compositions containing 10% and 20% Pr, an electron hopping conductivity was observed at high pO02 values. This contribution was strongest at low temperatures and was attributed to the formation of a praseodymium impurity band within the CeO2 band gap. Defect association significantly altered the predicted pO2 dependence of the impurity band conductivity, especially at low temperatures. The temperature dependences of the thermodynamic parameters governing defect formation and transport in PCO were determined. The reduction enthalpy of cerium was significantly decreased with additions of Pr from approximately 4.7 eV (the value in pure CeO2) to 3.4 eV in 20% PCO. The energy between the Pr impurity band and the CeO2 conduction band was approximately 0.95 eV for 10% and 20% PCO samples. The measured trap depth was significantly higher (approximately 1.6 eV) in 0.5% and 1% PCO. The migration enthalpy for impurity band hopping conductivity was approximately 0.55 eV, slightly higher than the hopping enthalpy for intrinsic carriers in CeO2 (0.4 eV).en_US
dc.description.abstract(cont.) The oxygen ion migration enthalpy measured for most samples was approximately 0.6- 0.7 eV, in agreement with values determined for other rare-earth doped systems. At 20% Pr, the total migration energy increased to approximately 0.9 eV. This increase was attributed to an association energy at high doping levels. Coulometric titration and points to the possible existence of uncharged oxygen vacancies, particularly at low temperatures. During the course of these experiments, it became evident that the mechanical stability of PCO needs to be addressed if the material is to be used in real applications. Oxygen uptake/evolution during reduction/oxidation cycles appears to result in development of significant stresses and cracking. While the material may be useful in powder form, this cracking issue must be addressed if it is to be used in bulk or thin film form.en_US
dc.description.statementofresponsibilityby Todd Stanley Stefanik.en_US
dc.format.extent135 p.en_US
dc.format.extent6121255 bytes
dc.format.extent6107117 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectMaterials Science and Engineering.en_US
dc.titleElectrical properties and defect structures of praseodymium-cerium oxide solid solutionsen_US
dc.typeThesisen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.identifier.oclc55850962en_US


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